Toshiba Corporation (TOKYO:6502) has launched a low ON-resistance power MOSFET as the latest addition to its TO-220SIS package series for automotive applications. The new product, "TK80A04K3L", also achieves low leakage current and guarantees operation at 175C. While it is primarily suited to automotive applications, it can also be used in motor drives and switching regulators.
Toshiba low ON-resistance power MOSFET in TO-220SIS package for automotive applications (Photo: Business Wire)Р Polarity Part number
Drain-to-source voltageVDSS (V)
Drain CurrentID (A)Series Nch TK80A04K3L 40 80 U-MOS IV Key Features 1. Low ON-resistance (VGS=10V) RDS(ON) = 1.9m(typ.) 2. Low leakage current IDSS=10٬A(max) (VDS=rated voltage) 3. Tch = 175C guaranteed 4. Lead-insertion type TO-220SIS package Р
*Follow this link for more on this product.http://www.semicon.toshiba.co.jp/eng/product/transistor/selection/topics/1267638_2470.html
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